SEMICONDUCTOR CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF SEMICONDUCTOR CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, POWER SUPPLY DEVICE, AND AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor crystal substrate capable of suppressing an occurrence of a crack at a periphery of a substrate.

SOLUTION: A semiconductor crystal substrate 110 and a protective layer 120 formed on a surface of the substrate 110 with a nitride are provided. In the protective layer 120, a peripheral region 120a corresponding to a periphery of the substrate 110 is in an amorphous state and an internal region 120b corresponding to an area inside of the peripheral region of the substrate 110 is crystallized.

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