| 摘要 |
In a process for depositing a material from the gas phase on a substrate by a reversible action, the reaction is controlled by varying the pressure of the gas in the reaction chamber. Reversal is effected mainly to clean the substrate. Examples described are V, Si and Ti with iodine, Zr with chlorine, bromine or iodine, Nb with chlorine and bromine, Ta with chlorine and bromine, and Cu with Cu2O-HCl. The substrate may be of the same material as that being deposited and may be quartz, carbon, silicon carbide, refractory oxides, and silicon. When semi-conductor materials are being deposited, doping materials may be added. The gas may be flowed through or remain in the reaction chamber.ALSO:In a process for depositing silicon from the gas phase, e.g iodine vapour on a substrate by a reversible action, the reaction is controlled by varying the pressure of the gas in the reaction chamber. Reversal is effected mainly to clean the substrate. The substrate may be of the same material as that being deposited and may be quartz, carbon, silicon carbide, refractory oxides, and silicon. When semi-conductor materials are being deposited, doping materials may be added. The gas may be flowed through or remain in the reaction chamber.
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