| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows preventing the occurrence of snapback while suppressing degradation of switching characteristics in a configuration in which an IGBT element and a freewheeling diode element are provided together on an identical semiconductor substrate. <P>SOLUTION: In a semiconductor device with a configuration in which an IGBT element and a freewheeling diode element are provided together on an identical semiconductor substrate and a buffer layer is provided between a drift layer of the semiconductor substrate and a collector layer of the IGBT element, the buffer layer is configured by a first buffer layer having a higher impurity concentration than the drift layer and a second buffer layer having a lower impurity concentration than the first buffer layer, and the second buffer layer is in contact with at least a part of the collector layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
