发明名称 Semiconductor Arrangement for Galvanically Isolated Signal Transmission and Method for Producing Such an Arrangement
摘要 A semiconductor arrangement includes an artificial chip having a semiconductor chip and an electrically insulating molding compound. The semiconductor chip has circuit structures and is embedded into the molding compound at all sides other than at a base area of the semiconductor chip in such a way that a base area of the artificial chip is enlarged by the molding compound relative to the base area of the semiconductor chip. A thin-film substrate is applied to the enlarged base area and extends beyond the base area of the semiconductor chip into the enlarged base area. The substrate has at least two layers composed of nonconductive material between which a structured metallization is disposed. A first coil is formed by one or a plurality of structured metallization layers in the substrate. A second coil is magnetically and/or capacitively coupled to the first coil and galvanically isolated from the first coil.
申请公布号 US2013087921(A1) 申请公布日期 2013.04.11
申请号 US201213621965 申请日期 2012.09.18
申请人 INFINEON TECHNOLOGIES AG;INFINEON TECHNOLOGIES AG 发明人 WAHL UWE
分类号 H01L23/498;H01L21/50 主分类号 H01L23/498
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