发明名称 |
Memory Cells And Methods Of Forming Memory Cells |
摘要 |
A memory cell includes a transistor device comprising a pair of source/drains, a body comprising a channel, and a gate construction operatively proximate the channel. The memory cell includes a capacitor comprising a pair of capacitor electrodes having a capacitor dielectric there-between. One of the capacitor electrodes is the channel or is electrically coupled to the channel. The other of the capacitor electrodes includes a portion of the body other than the channel. Methods are also disclosed.
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申请公布号 |
US2013087840(A1) |
申请公布日期 |
2013.04.11 |
申请号 |
US201113269304 |
申请日期 |
2011.10.07 |
申请人 |
KARDA KAMAL M.;MATHEW SURAJ J.;GUHA JAYDIP |
发明人 |
KARDA KAMAL M.;MATHEW SURAJ J.;GUHA JAYDIP |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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