NEGATIVE CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM, AND, RESIST-COATED MASK BLANKS, METHOD FOR FORMING RESIST PATTERN, AND PHOTOMASK, EACH USING THE SAME

摘要

PURPOSE: A negative chemical amplification resist composition is provided to form patterns satisfying high sensitivity, high resolution, scum reduction, and etching resistance. CONSTITUTION: A negative chemical amplification resist composition comprises a polymer compound having a repeating unit P which is represented by chemical formula 1 and is stable to acid and alkali and a repeating unit Q with a phenolic hydroxy group; a compound generating acid by active ray or radiation irradiation; and a crosslinking agent. In chemical formula 1, R1 is a hydrogen atom or methyl group, L1 is an oxygen atom or -NH-; L2 is a single bond or alkylene group; and A is hydrocarbon group.