发明名称 SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device and an operating method thereof. <P>SOLUTION: A semiconductor device comprises: a voltage generator which generates a test voltage; a graphene transistor to which a gate-source voltage is applied on the basis of the test voltage; and a detector which detects whether the gate-source voltage is a Dirac voltage of the graphene transistor and outputs a feedback signal indicating whether the gate-source voltage is the Dirac voltage. The feedback signal is applied to the voltage generator. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013065848(A) 申请公布日期 2013.04.11
申请号 JP20120193805 申请日期 2012.09.04
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM HO-JUNG;CHUNG U-IN;SHIN JAI-KWANG
分类号 H01L21/336;H01L29/786;H01L51/05;H01L51/30 主分类号 H01L21/336
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