发明名称 |
SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and an operating method thereof. <P>SOLUTION: A semiconductor device comprises: a voltage generator which generates a test voltage; a graphene transistor to which a gate-source voltage is applied on the basis of the test voltage; and a detector which detects whether the gate-source voltage is a Dirac voltage of the graphene transistor and outputs a feedback signal indicating whether the gate-source voltage is the Dirac voltage. The feedback signal is applied to the voltage generator. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013065848(A) |
申请公布日期 |
2013.04.11 |
申请号 |
JP20120193805 |
申请日期 |
2012.09.04 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM HO-JUNG;CHUNG U-IN;SHIN JAI-KWANG |
分类号 |
H01L21/336;H01L29/786;H01L51/05;H01L51/30 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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