| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member.
|
| 申请公布号 |
US2013089963(A1) |
申请公布日期 |
2013.04.11 |
| 申请号 |
US201213645147 |
申请日期 |
2012.10.04 |
| 申请人 |
CANON KABUSHIKI KAISHA;CANON KABUSHIKI KAISHA |
发明人 |
MISHIMA RYUICHI;ISHINO HIDEAKI;TOGO KENJI;ITAHASHI MASATSUGU;OKABE TAKEHITO |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
