发明名称 |
SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF, AND CAMERA |
摘要 |
A method of manufacturing a solid-state image sensor having a photoelectric conversion portion includes forming a silicon nitride film by a low-pressure chemical vapor deposition method using hexachlorodisilane (Si2Cl6) as a material gas such that the silicon nitride film covers at least a part of the photoelectric conversion portion.
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申请公布号 |
US2013088626(A1) |
申请公布日期 |
2013.04.11 |
申请号 |
US201213625663 |
申请日期 |
2012.09.24 |
申请人 |
CANON KABUSHIKI KAISHA;CANON KABUSHIKI KAISHA |
发明人 |
SHOYAMA TOSHIHIRO |
分类号 |
H01L27/146;H01L31/18;H04N5/335 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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