发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A lower electrode includes a metal-containing oxide layer having a thickness of 2 nm or less on the surface layer. A metal-containing oxide layer is formed by oxidizing the surface of the lower electrode. A dielectric film includes a first phase appearing at room temperature in the bulk state and a second phase appearing at a higher temperature than that in the first phase in the bulk state. The second phase has a higher relative permittivity than that of the first phase. |
申请公布号 |
US2013089964(A1) |
申请公布日期 |
2013.04.11 |
申请号 |
US201213689325 |
申请日期 |
2012.11.29 |
申请人 |
RESESAS ELECRONICS CORPORATION;RENESAS ELECRONICS CORPORATION |
发明人 |
IWAKI TAKAYUKI;ITOU TAKAMASA;SHIMIZU KANA |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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