发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME |
摘要 |
The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer. |
申请公布号 |
US2013087862(A1) |
申请公布日期 |
2013.04.11 |
申请号 |
US201213687407 |
申请日期 |
2012.11.28 |
申请人 |
PANASONIC CORPORATION;PANASONIC CORPORATION |
发明人 |
OOSUKA TSUTOMU;OGAWA HISASHI;SATO YOSHIHIRO |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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