| 发明名称 |
SUBSTRATE PROCESSING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing technique capable of heat treating a substrate having a polyimide film or a high-k film which is an object to be heated, while suppressing an excessive increase of a substrate temperature. <P>SOLUTION: A substrate processing apparatus comprises: a processing chamber for processing a substrate; a conductive substrate supporting base disposed in the processing chamber; a dielectric plate, disposed on the substrate supporting base, for mounting the substrate; a microwave generating part disposed outside of the processing chamber; and a microwave supplying part for supplying the microwave generated in the microwave generating part into the processing chamber. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013065623(A) |
申请公布日期 |
2013.04.11 |
| 申请号 |
JP20110202165 |
申请日期 |
2011.09.15 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
YASHIMA SHINJI;UMEKAWA AYAFUMI |
| 分类号 |
H01L21/31;H01L21/02;H01L21/268;H01L21/312;H01L21/316 |
主分类号 |
H01L21/31 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
