| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve erasing characteristics by suppressing variation in write thresholds of adjacent cells and reducing a leak current between a control gate electrode film and a silicon substrate. <P>SOLUTION: A semiconductor device of an embodiment comprises: a semiconductor substrate; a charge accumulation layer formed on an active region partitioned by an element isolation insulating film in the semiconductor substrate via a gate insulating film; an inter-electrode insulating film formed on an upper surface of the element isolation insulating film and on a side surface and an upper surface of the charge accumulation layer; and a control electrode layer formed on the inter-electrode insulating film. The inter-electrode insulating film has a lamination structure in which a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a second silicon nitride film are laminated and formed. The inter-electrode insulating film is configured so that the thickness of a portion on the upper surface of the element isolation insulating film in the second silicon oxide film is thinner than the thickness of a portion on the upper surface of the charge accumulation layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
