SURFACE TREATMENT OF A SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A method according to embodiments of the invention includes roughening (Fig. 6) a surface (58) of a semiconductor structure (46-48, Fig. 5). The semiconductor structure includes a light emitting layer (47). The surface (58) is a surface from which light is extracted from the semiconductor structure. After roughening, the roughened surface is treated (Fig. 7) to increase total internal reflection, or absorption at the surface, or to reduce an amount of light extracted from the semiconductor structure through the surface (58).