| 摘要 |
A Photovoltaic cell 60 includes a substrate 31, a front or first electrode 42 of transparent conductive oxide and at least one p-i-n junction 43 of microcrystalline silicon, said p-i-n junction 43 comprising a first n-doped silicon sub- layer 44 and a second p-doped silicon sub-layer 46 and a third sub-layer 45 with essentially intrinsic microcrystalline silicon. A passivation layer 45 comprising essentially intrinsic amorphous silicon is arranged a) between the microcrystalline intrinsic sub-layer 45 and n-doped silicon layer 46 or b) as a layer embedded in the microcrystalline intrinsic sublayer 45 or c) both. A method for manufacturing such a photovoltaic thin film silicon solar cell includes providing a transparent substrate 41 with a TCO front electrode 42 on it; depositing a p-doped Si layer 44, a microcrystalline silicon intrinsic layer 45, a passivation layer 55 from essentially intrinsic amorphous silicon, a n-doped Si layer 46 and a back electrode layer 48.
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