| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with an oxide semiconductor and having stable electrical characteristics, specifically, the semiconductor device with the oxide semiconductor including a gate insulating film with more excellent characteristics, and a method for manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, and a source electrode and a drain electrode formed in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
