| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase luminous efficiency in a ZnO-based optical semiconductor element. <P>SOLUTION: An optical semiconductor element B is composed of n-type Zn<SB POS="POST">1-z</SB>Mg<SB POS="POST">z</SB>O (barrier layer) 11/Zn<SB POS="POST">1-x</SB>Mg<SB POS="POST">x</SB>O (active layer) 15/p-type Zn<SB POS="POST">1-y</SB>Mg<SB POS="POST">y</SB>O (barrier layer) 17 and has a structure in which light is emitted from the active layer 15. Electrodes 23 and 21 are formed for the respective barrier layers 11 and 17 and by applying voltage between the electrodes 23 and 21, light is emitted from ZnO (active layer) 15. Note that, there are relations represented as x<y and x<z, and values such as x=0.1, y=0.15, and z=0.16 can be selected as examples. Values such as x=0.15, y=0.25, and z=0.24 can be selected. In this case, with an increased x value of the active layer, an emission wavelength can be shifted to a shorter wavelength side. Further, as indicated in the above-described result, because the luminous efficiency can be increased with the increased x value, the optical semiconductor element is found excellent as a light-emitting element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
