发明名称 SUPPORTING SUBSTRATE, METHOD OF MANUFACTURING SUPPORTING SUBSTRATE, AND METHOD OF PROCESSING SEMICONDUCTOR SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a supporting substrate that allows preventing contamination due to an impurity, a method of manufacturing the supporting substrate, and a method of processing a semiconductor substrate using the supporting substrate. <P>SOLUTION: The supporting substrate reinforces a semiconductor substrate by bonding the supporting substrate onto the semiconductor substrate on thinning the semiconductor substrate, and is composed of a single-crystal silicon substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013065760(A) 申请公布日期 2013.04.11
申请号 JP20110204367 申请日期 2011.09.20
申请人 TOSHIBA CORP 发明人 MATSUO ISAO
分类号 H01L21/304;H01L21/683 主分类号 H01L21/304
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