Forming a Bridging Feature Using Chromeless Phase-Shift Lithography

摘要

An elongated, chromeless, bridging feature is formed on a photolithography mask with an etching depth that causes a nominal phase difference of more than 180 degrees to energy passing through the photolithography mask. A corresponding photoresist feature is formed using the bridging feature. The phase difference may be chosen to minimize dimensional variation of the corresponding photoresist feature.