| 摘要 |
A non-volatile semiconductor memory device according to an embodiment includes a memory cell array including first lines, second lines, and memory cells each including a variable resistor and each connected between one of the first lines and one of the second lines, and a control circuit configured to perform a voltage application operation of applying a first voltage to a selected first line connected to a selected memory cell and applying a second voltage having a voltage value lower than the first voltage to a selected second line connected to the selected memory cell. The control circuit is configured to select the voltage value of the second voltage from among a plurality of different voltage values and output the second voltage.
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