MEMORY DEVICE USING GRAPHENE AND METHOD FOR MANUFACTURING SAME

摘要

Provided are a memory device using graphene and a method for manufacturing same. The memory device using graphene comprises: at least one programming electrode arranged so as to intersect with a graphene layer; and a ferroelectric layer interposed between the graphene layer and the programming electrode. Thus, the memory device may have non-volatile properties using a difference in resistances of the graphene layer due to the polarity of a polling voltage applied through the at least one programming electrode. Further, two or more programming electrodes are arranged, and polling voltages of the same polarity or different polarities are applied to each programming electrode, thereby achieving multi-bits. In addition, the method for manufacturing the memory device using graphene involves forming only one ferroelectric layer capable of maintaining polarization through polling, thus enabling an electric field to be continuously applied to the graphene layer contacting the ferroelectric layer.