| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which optimally removes a scum without causing adverse effects on a ground layer of a resist pattern. <P>SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming an oxide film 5c on a semiconductor substrate 1; applying a photo resist 8 on the oxide film 5c; exposing the photo resist 8; forming an opening 8a in the photo resist 8 by developing the exposed photo resist 8; performing an oxygen plasma treatment on the oxide film 5c by using the photo resist 8 as a mask; supplying, after the oxygen plasma treatment, diluted hydrofluoric acid to the oxide film 5c and the photo resist 8; and ion injecting, after the step of supplying the diluted hydrofluoric acid, a one-conductivity impurity to the semiconductor substrate 1 through the oxide film 5c using the photo resist 8 as a mask. <P>COPYRIGHT: (C)2013,JPO&INPIT |
