| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent an etchant from soaking from a memory cell region around a guard ring into a peripheral circuit region. <P>SOLUTION: A semiconductor device manufacturing method comprises: forming a first interlayer insulation film on a semiconductor substrate in which a memory cell region and a peripheral circuit region are demarcated; removing a part of the first interlayer insulation film to form a guard ring groove around the memory cell region; filling the guard ring groove with a metal conductive material to form a guard ring and forming a support film on the first interlayer insulation film so as to cover the guard ring; forming openings in the support film in the memory cell region; and removing the first interlayer insulation film in the memory cell region with leaving the first interlayer insulation film in the peripheral circuit region by performing wet etching through the openings. <P>COPYRIGHT: (C)2013,JPO&INPIT |
