发明名称 |
MOM Capacitor Having Local Interconnect Metal Plates and Related Method |
摘要 |
According to one exemplary embodiment, a metal-oxide-metal (MOM) capacitor in a semiconductor die comprises a first plurality of capacitor plates and a second plurality of capacitor plates sharing a plane parallel to and below a plane of a first metallization layer of the semiconductor die. The MOM capacitor further comprises a local interlayer dielectric between the first plurality of capacitor plates and the second plurality of capacitor plates. The first and second plurality of capacitor plates are made from a local interconnect metal for connecting devices formed in a device layer of the semiconductor die situated below the first metallization layer.
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申请公布号 |
US2013087886(A1) |
申请公布日期 |
2013.04.11 |
申请号 |
US201113270452 |
申请日期 |
2011.10.11 |
申请人 |
CHEN XIANGDONG;CHEN HENRY KUO-SHUN;BROADCOM CORPORATION |
发明人 |
CHEN XIANGDONG;CHEN HENRY KUO-SHUN |
分类号 |
H01L29/02;H01L21/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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