发明名称 |
METHOD OF FABRICATING A GAN MERGED P-I-N SCHOTTKY (MPS) DIODE |
摘要 |
A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial structure including a first III-nitride epitaxial layer coupled to the first side of the III-nitride substrate and a plurality of III-nitride regions of a second conductivity type. The plurality of III-nitride regions have at least one III-nitride epitaxial region of the first conductivity type between each of the plurality of III-nitride regions. The semiconductor structure further includes a first metallic structure electrically coupled to one or more of the plurality of III-nitride regions and the at least one III-nitride epitaxial region. A Schottky contact is created between the first metallic structure and the at least one III-nitride epitaxial region.
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申请公布号 |
US2013087878(A1) |
申请公布日期 |
2013.04.11 |
申请号 |
US201113270625 |
申请日期 |
2011.10.11 |
申请人 |
EDWARDS ANDREW P.;NIE HUI;KIZILYALLI ISIK C.;ROMANO LINDA;BOUR DAVID P.;BROWN RICHARD J.;PRUNTY THOMAS R.;EPOWERSOFT, INC. |
发明人 |
EDWARDS ANDREW P.;NIE HUI;KIZILYALLI ISIK C.;ROMANO LINDA;BOUR DAVID P.;BROWN RICHARD J.;PRUNTY THOMAS R. |
分类号 |
H01L29/47;H01L21/20 |
主分类号 |
H01L29/47 |
代理机构 |
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