| 摘要 |
A resist pattern formation method that includes a step (1) of forming a resist pattern on a support using a chemically amplified positive-type resist composition, a step (2) of applying a pattern miniaturization agent to the resist pattern, a step (3) of performing a bake treatment of the resist pattern to which the pattern miniaturization agent has been applied, and a step (4) of subjecting the resist pattern that has undergone the bake treatment to alkali developing, wherein the pattern miniaturization agent contains an acid generator component, and an organic solvent that does not dissolve the resist pattern formed in the step (1). Also, a pattern miniaturization agent used in the method. |
