发明名称 RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition which sufficiently satisfies sensitivity, and is excellent in EL, DOF, CDU, and MEEF. <P>SOLUTION: The radiation sensitive resin composition forms a resist pattern using a developer containing 80 mass% or more of an organic solvent. The radiation sensitive resin composition includes (A) a polymer containing an acid-dissociable group, and (B) a radiation-sensitive acid generator. When development is conducted with the organic solvent, a contrast value &gamma; calculated from a resist sensitivity curve is 5.0 or more and 30.0 or less. The organic solvent is effectively at least a kind of organic solvent selected from the group consisting of 3-7C carboxylic acid alkyl ester and 3-10C dialkyl ketone. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013064981(A) 申请公布日期 2013.04.11
申请号 JP20120115093 申请日期 2012.05.18
申请人 JSR CORP 发明人 SAKAKIBARA HIROKAZU;MIYATA HIROMU;ITO NOBUJI;FURUKAWA TAIICHI
分类号 G03F7/038;C08F220/10;G03F7/004;G03F7/32;H01L21/027 主分类号 G03F7/038
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