| 摘要 |
<P>PROBLEM TO BE SOLVED: To implement a low local power operation while avoiding the output degradation of a multiplication signal. <P>SOLUTION: A magnetoresistance effect element 2 has a magnetically fixed layer, a magnetically free layer and a nonmagnetic spacer layer disposed between the magnetically fixed layer and the magnetically free layer, and when a high frequency signal S1 and a local signal S2 are input, multiplies both signals S1, S2 by a magnetoresistance effect to generate a voltage signal (multiplication signal) S4. A magnetic field generated by a magnetic field application section 3 is applied to the magnetically free layer in a film surface normal direction or at an angle with a film surface direction toward the film surface normal direction, so that a high Q value resonance characteristic can be implemented to produce a large multiplication signal and further provide a frequency conversion device having the function of narrowband frequency selectivity. <P>COPYRIGHT: (C)2013,JPO&INPIT |
