发明名称 MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which effectively removes oxide films on surfaces of solder bumps, prevents warpage of a semiconductor element or the like, and improves the connectivity of the solder bumps. <P>SOLUTION: According to one embodiment, solder bumps 3 of a second semiconductor chip 5 are temporarily fixed to metal electrodes 1 of a first semiconductor chip 2 while a space between the first semiconductor chip 2 and the second semiconductor chip 5 is held by spacer protrusions 4. Subsequently, a laminated body, which is temporarily fixed, is heated with an atmosphere of a carboxylic acid gas such as formic acid while a load is applied to the laminated body. Then, the solder bumps 3 are joined with each other while the oxide films on the surfaces of the solder bumps 3 are reduced and removed. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013065761(A) 申请公布日期 2013.04.11
申请号 JP20110204369 申请日期 2011.09.20
申请人 TOSHIBA CORP 发明人 KOMUDA NAOYUKI
分类号 H01L21/60 主分类号 H01L21/60
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