| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows reduction in parasitic resistance. <P>SOLUTION: The semiconductor device includes a first semiconductor layer (1) having a projection (2) extending along a surface of the first semiconductor layer. A gate electrode (12) sandwiches a gate insulating film and covers a surface of the projection. Second semiconductor layers (28 and 45) are formed on the side of a portion different from the portion of the projection which is covered with the gate electrode, and have trenches (31 and 52). Source/drain regions (30 and 46) are formed in the second semiconductor layer. A silicide film (33) covers a surface of the second semiconductor layer including surfaces of the trenches. A conductive plug (37) is in contact with the silicide film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
