| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a resistor is inserted between a gate and a source without affecting a leakage current test for a gate insulating film. <P>SOLUTION: The semiconductor device includes a transistor in which a resistor is inserted between a gate electrode and a source electrode, and has a diode inserted in series to the resistor between the gate electrode and the source electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
