发明名称 |
MONOLITHICALLY INTEGRATED HEMT AND SCHOTTKY DIODE |
摘要 |
An integrated device including a III-nitride HEMT and a Schottky diode includes a substrate comprising a first III-nitride material and a drift region comprising a second III-nitride material coupled to the substrate and disposed adjacent to the substrate along a vertical direction. The integrated device also includes a first barrier layer coupled to the drift region and a channel layer comprising a third III-nitride material having a first bandgap and coupled to the barrier layer. The integrated device further includes a second barrier layer characterized by a second bandgap and coupled to the channel layer and a Schottky contact coupled to the drift region. The second bandgap is greater than the first bandgap.
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申请公布号 |
US2013087803(A1) |
申请公布日期 |
2013.04.11 |
申请号 |
US201113267552 |
申请日期 |
2011.10.06 |
申请人 |
KIZILYALLI ISIK C.;NIE HUI;EDWARDS ANDREW P.;ROMANO LINDA;BOUR DAVID P.;BROWN RICHARD J.;PRUNTY THOMAS R.;EPOWERSOFT, INC. |
发明人 |
KIZILYALLI ISIK C.;NIE HUI;EDWARDS ANDREW P.;ROMANO LINDA;BOUR DAVID P.;BROWN RICHARD J.;PRUNTY THOMAS R. |
分类号 |
H01L29/778;H01L21/335 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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