| 摘要 |
An oxide semiconductor film is formed over a substrate, a film of a semiconductor other than an oxide semiconductor is formed over the oxide semiconductor film, and then an oxygen atom in the oxide semiconductor film and an atom in the film of a semiconductor are bonded to each other at an interface between the oxide semiconductor film and the film of a semiconductor. Accordingly, the interface can be made continuous. Further, oxygen released from the oxide semiconductor film is diffused into the film of a semiconductor, so that the film of a semiconductor can be oxidized to form an insulating film. The use of the gate insulating film thus formed leads to a reduction in interface scattering of electrons at the interface between the oxide semiconductor film and the gate insulating film; so that a transistor with excellent electric characteristics can be manufactured.
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