发明名称 LATERAL ETCH STOP FOR NEMS RELEASE ETCH FOR HIGH DENSITY NEMS/CMOS MONOLITHIC INTEGRATION
摘要 Structure and method for fabricating a barrier layer that separates an electromechanical device and a CMOS device on a substrate. An example structure includes a protective layer encapsulating the electromechanical device, where the barrier layer may withstand an etch process capable of removing the protective layer, but not the barrier layer. The substrate may be silicon-on-insulator or a multilayer wafer substrate. The electromechanical device may be a microelectromechanical system (MEMS) or a nanoelectromechanical system (NEMS).
申请公布号 US2013087882(A1) 申请公布日期 2013.04.11
申请号 US201113269552 申请日期 2011.10.07
申请人 CHANG JOSEPHINE B.;CHANG LELAND;ENGELMANN SEBASTIAN U.;GUILLORN MICHAEL A.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHANG JOSEPHINE B.;CHANG LELAND;ENGELMANN SEBASTIAN U.;GUILLORN MICHAEL A.
分类号 H01L27/12;H01L21/56 主分类号 H01L27/12
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