| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can increase a coupling capacity ratio among a control gate and floating gates even when an element thereof is miniaturized, and further to provide a manufacturing method thereof. <P>SOLUTION: A semiconductor storage device is provided with a semiconductor substrate. First insulation films are formed on the semiconductor substrate. Each of floating gates includes a first floating gate part provided on the first insulation film, an intermediate insulation film provided on the first floating gate part and a second floating gate part provided on the intermediate insulation film and is configured so as to be able to accumulate charge. Second insulation films are provided on top faces and lateral faces of the floating gates. A control gate faces the top faces and the lateral faces of the floating gates via the second insulation films and controls voltages of the floating gates. On the lateral faces of the floating gates, the intermediate insulation films are recessed with respect to the first and second floating gate parts. <P>COPYRIGHT: (C)2013,JPO&INPIT |
