发明名称 |
APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL |
摘要 |
Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with a cylindrical assisting tool having a plurality of pores formed at least at a side thereof and made of the graphite material. |
申请公布号 |
WO2013002540(A3) |
申请公布日期 |
2013.04.11 |
申请号 |
WO2012KR05048 |
申请日期 |
2012.06.26 |
申请人 |
SK INNOVATION CO.,LTD.;KIM, YOUNG SHOL;BAE, SUN HYUK;HONG, SUNG WAN |
发明人 |
KIM, YOUNG SHOL;BAE, SUN HYUK;HONG, SUNG WAN |
分类号 |
C30B15/00;C30B15/10;C30B29/36;H01L33/00 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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