发明名称 Substrate processing apparatus
摘要 A substrate treatment apparatus is provided to arrange core electrodes in appropriate positions at the upper part of a chamber to minimize loss of plasma and generate uniform plasma on a substrate so as to improve process parameters affected by the uniformity of plasma distribution. A substrate treatment apparatus includes a chamber(110), a substrate(S), a plurality of core electrodes(130), a power supply(160), a gas supply unit and a gas discharging unit. The chamber forms a predetermined reaction space and includes a substrate mount(120). The substrate is mounted on the substrate mount. The plurality of core electrodes is placed above the substrate and generates induced electric fields to form a closed circuit. The power supply provides power to the core electrodes. The gas supply unit supplies process gases to the chamber. The gas discharging unit discharges gases left in the chamber.
申请公布号 KR101253751(B1) 申请公布日期 2013.04.11
申请号 KR20060068657 申请日期 2006.07.21
申请人 发明人
分类号 G02F1/13;G02F1/136 主分类号 G02F1/13
代理机构 代理人
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