| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern formation method which inhibits pattern processing defects due to a level difference in a base according to one embodiment. <P>SOLUTION: According to one embodiment, a pattern formation method includes a process where a first imprint resist is formed on a processed film and the first imprint resist is cured with a flat surface of a first template contacting with a surface of the first imprint resist to flatten the surface of the first imprint resist. Further, the pattern formation method includes a process where a second imprint resist is formed on an intermediate transfer film formed on a flat surface of the first imprint resist and the second imprint resist is cured with irregularities of a second template contacting with the second imprint resist to form an irregular pattern on the second imprint resist. <P>COPYRIGHT: (C)2013,JPO&INPIT |
