发明名称 NITRIDE SEMICONDUCTOR LASER ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element which has a high output and a long life, and in which a Catastrophic Optical Damage (COD) is hard to occur in a resonator end face. <P>SOLUTION: In a nitride semiconductor laser element 10 comprising: a nitride semiconductor layer 20; a resonator provided in the nitride semiconductor layer 20; and end face coat films 18 and 19 formed on mutually facing end faces of the resonator, a layer of the end face coat film 18 contacting with the nitride semiconductor layer 20 formed on at least one end face in laser beam emission side is composed of an AlN having film density of 2.83 g/cm<SP POS="POST">3</SP>or higher. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013065886(A) 申请公布日期 2013.04.11
申请号 JP20120273350 申请日期 2012.12.14
申请人 SHARP CORP 发明人 YAMADA EIJI;KAMIKAWA TAKESHI;KAWAGUCHI YOSHINOBU
分类号 H01S5/028;H01S5/323 主分类号 H01S5/028
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