| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device using a material not containing silicon in a channel region, which inhibits a gate leakage current even when a gate insulation layer is thinned along with microfabrication. <P>SOLUTION: A thermal silicon oxide layer is used as a gate insulation layer. By using the thermal silicon oxide layer, a gate leakage current can be inhibited in comparison with a case of using a silicon oxide layer formed by a CVD method or sputtering. A semiconductor device manufacturing method comprises: preparing a silicon substrate separately from a substrate on which a semiconductor layer including a channel region is formed in order to use the thermal silicon oxide layer for the gate insulation layer, and forming the thermal silicon oxide layer on the silicon substrate; and subsequently, bonding the thermal silicon oxide layer to the semiconductor layer including the channel region. In this way, the thermal silicon oxide layer is formed on the semiconductor layer and a transistor using the thermal silicon oxide layer as the gate insulation layer is formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
