发明名称 FUSE STRUCTURE FOR HIGH INTEGRATED SEMICONDUCTOR DEVICE
摘要 The present invention provides a technology capable of improving an operation reliability of a semiconductor device. Particularly, a fuse material which constitutes the copper can be prevented from migrating being locked in the recesses or the grooves after a blowing process. A semiconductor device includes an insulating layer including a concave-convex-shaped upper part; and a fuse formed on the insulating layer.
申请公布号 US2013089976(A1) 申请公布日期 2013.04.11
申请号 US201213687332 申请日期 2012.11.28
申请人 HYNIX SEMICONDUCTOR INC.;HYNIX SEMICONDUCTOR INC. 发明人 KIM HYUNG KYU
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
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