| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lightweight light emitting device in which deterioration in an EL layer is suppressed and an influence due to electric field concentration at an edge of an electrode such as an anode is minimized. <P>SOLUTION: The light emitting device includes a thin film transistor on a substrate and an insulation film on the thin film transistor. The insulation film has a contact hole, and an anode is electrically connected to the thin film transistor via the contact hole. The light emitting device includes the anode and another insulation film in the contact hole, and the anode has a recessed shape in the contact hole. The other insulation film may have a resin and fill the recessed shape. <P>COPYRIGHT: (C)2013,JPO&INPIT |
