| 摘要 |
Disclosed are a thin film transistor substrate and a method of fabricating the same in which the number of processes is reduced. The method includes forming a first conductive pattern including gate electrodes and gate lines on a substrate through a first mask process, depositing a gate insulating film and forming a second conductive pattern including a semiconductor pattern, source and drain electrodes and data lines through a second mask process, depositing first and second passivation films and forming pixel contact holes passing through the first and second passivation films and exposing the drain electrodes through a third mask process, and forming a third conductive pattern including a common electrode and a common line and forming a third passivation film formed in an undercut structure with the common electrode through a fourth mask process, simultaneously, and forming a fourth conductive pattern including pixel electrodes through a lift-off process.
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