NONVOLATILE STORAGE ELEMENT AND NONVOLATILE STORAGE DEVICE

摘要

A nonvolatile storage device is provided with a first electrode (103), a second electrode (106), and a variable-resistance layer (104). The variable-resistance layer (104) comprises: a first oxide layer (104a) comprising a first metallic oxide; a second oxide layer (104b) that is disposed between the first oxide layer (104a) and the second electrode (106) in contact therewith, that comprises a second metallic oxide, and that has a lower degree of oxygen deficiency compared to the first oxide layer (104a); and a local section (105) that is disposed within the first oxide layer (104a) and the second oxide layer (104b) in contact with the second electrode (106), that is not in contact with the first electrode (103), the degree of oxygen deficiency of which is high compared to that of the second oxide layer (104b), and the degree of oxygen deficiency of which is different from that of the first oxide layer (104a).