| 摘要 |
<p>To provide a photoelectric conversion device having high conversion efficiency and a method for manufacturing the same. The photoelectric conversion device includes a working electrode that has a transparent electrode (2) and a porous metal oxide semiconductor layer (3) that is formed on a surface of the transparent electrode (2) and supported with a dye; a counter electrode (5); and an electrolyte layer (4), the hydroxyl group concentration on the surface of the oxide semiconductor layer is 0.01 groups/(nm) 2 or more and 4.0 groups/(nm) 2 or less, and the adsorbed water concentration on the surface thereof is 0.03 pieces/(nm) 2 or more and 4.0 pieces/(nm) 2 or less. The method for manufacturing a photoelectric conversion device includes a first step of forming a porous metal oxide semiconductor layer (3) on a surface of a transparent electrode (2), a second step of controlling the hydroxyl group concentration on the surface of the oxide semiconductor layer to be 0.01 groups/(nm) 2 or more and 4.0 groups/(nm) 2 or less and the adsorbed water concentration on the surface to be 0.03 pieces/nm 2 or more and 4.0 pieces/(nm) 2 or less by low temperature plasma processing under an oxidizing atmosphere, and a third step of supporting a dye in the oxide semiconductor layer.</p> |
