| 摘要 |
A plurality of SiC semiconductor chips are mounted on a mounting substrate (S1), and a voltage is applied to the SiC semiconductor chips on the mounting substrate (S2). In the state in which the voltage is applied, thermography, infrared microscope, or another thermal imaging device is used to acquire a temperature distribution image of the surface of the mounting substrate (S3), and by conducting image analysis, the presence of a defective chip is determined (S5). If a defective chip is included on the mounting substrate ("YES" in S5), wiring of the defective chip is severed to exclude the defective chip (S7). By this means, a method for manufacturing a semiconductor device using small-capacity chips is provided. |
