发明名称 LIGHT EMITTING DIODE WITH THERMORADIATION HEAT-DISSIPATION LAYERS
摘要 <p>A light emitting diode (LED) includes a sapphire substrate, a first thermoradiation heat-dissipation layer, a second thermoradiation heat-dissipation layer, an epitaxy light emitting structure, a first metal contact layer and a second metal contact layer. The first and second thermoradiation heat-dissipation layers are fabricated from a mixture of metal and nonmetal, and are fabricated on the upper and lower surfaces of the sapphire substrate, respectively. The heat generated by the epitaxy light emitting structure propagates through the first and second thermoradiation heat-dissipation layers by directive thermal radiation. The efficiency of heat dissipation is improved to increase the efficiency of light emitting and prolong the lifespan of LED and LED products.</p>
申请公布号 EP2579341(A1) 申请公布日期 2013.04.10
申请号 EP20110786062 申请日期 2011.05.21
申请人 JINGDEZHEN FARED TECHNOLOGY CO., LTD 发明人 CHEN, JEONG-SHIUN
分类号 H01L33/36 主分类号 H01L33/36
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