| 摘要 |
The present invention relates to a nanoimprint lithography method. Said nanoimprint lithography method comprises: a preparation step during which a resin (120) is placed on a substrate (130); a step of pressing a mold (200, 300, 400, 500), comprising raised patterns (202), in order to transfer the raised patterns (202) of the mold (200, 300, 400, 500) into the resin (120) so as to form designs (230) therein, which each have at least one end; and a removal step for separating the mold (200, 300, 400, 500) from the resin (120), characterized in that the resin (120) is a positive photosensitive resin, in that it includes an exposure step for activating the resin (120) before or after the step of removing the mold (200, 300, 400, 500), and in that it includes, prior to the exposure step, a masking step during which a mask coating (110, 310), partially stopping at least the exposure of the resin (120) that it covers and only covering the resin (120) outside the end of the designs (230), is placed between the mold (200, 300, 400, 500) and the resin (120). |
