| 摘要 |
A apparatus (1) for manufacturing a silicon carbide single crystal comprises a graphite crucible (10) and configured so that the upper opening (11b) of a cylindrical crucible main body (11) has been blocked with a cover member (12), and a heating member comprising a single heating coil continuously wound around the outer periphery of the graphite crucible (10) and in which a sublimation material (50) is held on the bottom (11a) and a seed crystal (60) is attached to the inner surface (12a) of the crucible. The lower coil (31), which has wound around the bottom (11a) of the crucible main body (11), and the upper coil (32), which has wound around the cover member (12), have coil pitches (P1 and P3) which are smaller than the coil pitch (P2) of the central coil (33), which has wound around a center in the height-direction of the crucible main body (11). |
