| 摘要 |
A manufacturing method of a semiconductor device, wherein the steps of forming source/drain regions include: defining a boundary region and forming an auxiliary layer (160), wherein the boundary region is covered by the auxiliary layer (160), and the boundary region includes a part of the width of the active region abutting an isolation region (120); using the auxiliary layer (160),the gate-stack structure and the isolation region (120) as a mask, removing a part of the thickness of the semiconductor substrate (100) within the active region to form a recess; forming semiconductor materials (182) in the recess to fill up the recess. And a semiconductor device is provided, wherein the semiconductor substrate (100) material is sandwiched between the source/drain regions and the isolation region (120) of the semiconductor device, thereby improving the reduction of leakage current.
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